The CA-IS1311G-Q1 devices are high-precision reinforcedisolated amplifiers and optimized for voltage sensing. Lowoffset and gain error and drift guarantee that measuringaccuracy is maintained over the entire operatingtemperature range.

The CA-IS1311G-Q1 devices utilize silicon oxide (SiO2)isolation barriers and support up to 5-kVRMS galvanicisolation per UL 1577. This technology separates high- andlow-voltage domain to protect lower-voltage parts fromdamage and provides low emissions as well as strong antinterference capability from magnetic changes. The highcommon-mode transient immunity (CMTI) means that theCA-IS1311G-Q1 devices transmit correct signals throughisolation barriers and are suitable for automotive motorcontrols and drives which require high-voltage and highpower switching. The internal missing or undervoltagelockout (UVLO) of high-side supply voltage detectionfunctions contribute to fault diagnostics and system safety.

The input of CA-IS1311G-Q1 is high-impedance, making itsuitable for applications where the measured signal sourceshave high output resistance (such as high-voltage resistivedividers). The CA-IS1311G-Q1 devices have shutdown mode,which could shut down the high-side circuit by pulling upSHTDN pin to save power.

The CA-IS1311G-Q1 devices are packaged in wide body, 8-pin SOIC packages and specified over the automotivetemperature range of –40°C to 125°C.